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STP40NF10
N-channel 100V - 0.025 - 50A TO-220 Low gate charge STripFETTM II Power MOSFET
General features
Type STP40NF10

VDSS 100V
RDS(on) <0.028
ID 50A
Exceptional dv/dt capability Low gate charge at 100C Application oriented characterization 100% avalanche tested
1 3 2
TO-220
Description
This MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP40NF10 Marking P40NF10 Package TO-220 Packaging Tube
January 2007
Rev 3
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Contents
STP40NF10
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STP40NF10
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID
(1)
Absolute maximum ratings
Parameter Drain-source voltage (vgs = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 100 20 50 35 200 150 1 27 385 - 55 to 175 Max. operating junction temperature Unit V V A A A W W/C V/ns mj C
ID IDM
(2)
PTOT dv/dt(3) EAS
(4)
Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature
Tstg Tj
1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. ISD 50A, di/dt 600A/s, VDD V(BR)DSS, Tj TJMAX. 4. Starting Tj= 25C, ID= 50A, VDD=25V
Table 2.
Rthj-a Tl
Thermal data
1 62.5 300 C/W C/W C Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose
Rthj-case Thermal resistance junction-case Max
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Electrical characteristics
STP40NF10
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS=Max rating,TC=125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 25A 2 3 0.025 Min. 100 1 10 100 4 0.028 Typ. Max. Unit V A A nA V
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDS = 25V, f = 1 MHz, VGS = 0 Test conditions VDS = 15V, ID=28A Min. Typ. 22 2180 298 83.7 VDD = 80V, ID = 50A, VGS = 10V (see Figure 14) 57.6 13.3 17.5 76 Max. Unit S pF pF pF nC nC nC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5.
Table 5.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 50V, ID = 25A RG = 4.7 VGS = 10V (see Figure 13) VDD = 27V, ID = 40A, RG = 4.7, VGS = 10V (see Figure 13) Min. Typ. 21 46 54 13 Max. Unit ns ns ns ns
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STP40NF10 Table 6.
Symbol ISD ISDM VSD
(1) (2)
Electrical characteristics Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50A, VGS = 0 ISD = 50A, VDD = 25V di/dt = 100A/s, Tj = 150C (see Figure 15) 80 250 6.4 Test conditions Min. Typ. Max 80 320 1.5 Unit A A V ns nC A
trr Qrr IRRM
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STP40NF10
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STP40NF10 Figure 7. Gate charge vs. gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10. Normalized on resistance vs. temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized breakdown voltage vs. tj
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Test circuit
STP40NF10
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
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STP40NF10
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com
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Package mechanical data
STP40NF10
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STP40NF10
Revision history
5
Revision history
Table 7.
Date 16-Dec-2004 17-Aug-2006 31-Jan-2007
Revision history
Revision 1 2 3 First version. The document has been reformatted. Typo mistake on Table 1. Changes
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STP40NF10
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